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The Ellen DeGeneres Show (season 15)
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This is a list of episodes of the fifteenth[1] season of The Ellen DeGeneres Show, which began airing from Tuesday September 5, 2017.
Season 15 (2017–18)[edit]
#(Season)
#(Series)
Air Date
Guests
15-01 2,257 September 5, 2017 Will Ferrell, Mark Wahlberg
15-02 2,258 September 6, 2017 Reese Witherspoon, Pink
15-03 2,259 September 7, 2017 Miley Cyrus
Miley Cyrus performs Younger Now
15-04 2,260 September 8, 2017 Halle Berry
15-05 2,261 September 11,2017 Queen Latifah, Portugal. The Man
15-06 2,262 September 12,2017 Heidi Klum
15-07 2,263 September 13,2017 Alec Baldwin, Tig Notaro, Harry MacKenzie
15-08 2,264 September 14, 2017 Jessica Biel, Kym Douglas, Lonzo Ball, LaVar Ball & Luis Fonsi
15-09 2,265 September 15, 2017 Channing Tatum, Kyle MacLachlan, Grace VanderWaal
15-10 2,266 September 18, 2017 Justin Theroux, Drew Carey, Grace VanderWaal
15-11 2,267 September 19, 2017 Sarah Paulson, Nick Jonas
15-12 2,268 September 20, 2017 Megyn Kelly. Russell Westbrook, Logic & Alessia Cara
15-13 2,269 September 21, 2017 Judi Dench, Imagine Dragons
15-14 2,270 September 22, 2017 Jake Gyllenhaal, Kesha, Darci Lynne Farmer
15-15 2,271 September 25, 2017 Mandy Moore, Sterling K. Brown & Milo Ventimiglia, Macklemore & Kesha
15-16 2,272 September 26, 2017 Jane Fonda, Taye Diggs, Bleachers
15-17 2,273 September 27, 2017 Eric Stonestreet, Whitney Cummings, Kelsea Ballerini
15-18 2,274 September 28, 2017 Jamie Foxx & Jay Pharoah, Cole Swindell
15-19 2,275 September 29, 2017 LL Cool J, Shania Twain
15-20 2,276 October 2, 2017 Anthony Anderson, Victoria Arlen & Val Chmerkovskiy
15-21 2,278 October 3, 2017 Howie Mandel, Rita Ora
15-22 2,279 October 4, 2017 Oprah Winfrey, Demi Lovato
15-23 2,280 October 5, 2017 Jared Leto, Savannah Guthrie, Thirty Seconds to Mars
15-24 2,281 October 6, 2017 Ryan Gosling, Ricky Martin, Usher
15-25 2,282 October 9, 2017 Harrison Ford
15-26 2,283 October 10, 2017 Josh Gad, Charlie Puth
15-27 2,284 October 11, 2017 Gina Rodriguez, French Montana, Sean Combs, Swae Lee
15-28 2,285 October 12, 2017 Kate Hudson, Nacho Figueras, Andra Day & Common
15-29 2,286 October 13, 2017 Mindy Kaling, Bethenny Frankel, Anderson East
15-30 2,287 October 16, 2017 Cate Blanchett, Taylor Kitsch, Dain Yoon
15-31 2,288 October 17, 2017 Andrew Garfield, Snoop Dogg, Beck
15-32 2,289 October 18, 2017 Laura Dern, Arcade Fire
15-33 2,290 October 19, 2017 Dax Shepard, Jordan Fisher & Lindsay Arnold, HAIM
15-34 2,291 October 20, 2017 Paris Jackson, Niall Horan, Kunal Nayyar
15-35 2,292 October 23, 2017 Justin Hartley, Bobby Moynihan, Jordan Fisher & Lindsay Arnold
15-36 2,293 October 24, 2017 Michael Strahan, Sam Smith
15-37 2,294 October 25, 2017 Cast of 'Strange Things', Sean Hayes, Finn Wolfhard, Gaten Matarazzo, Caleb McLaughlin & Noah Schnapp, Sheryl Crow
15-38 2,295 October 26, 2017 Matt Damon, Luke Bryan
15-39 2,296 October 27, 2017 Kristen Bell, Mila Kunis & Kathryn Hahn, Kelly Clarkson
15-40 2,297 October 30, 2017 Jim Parsons & Iain Armitage, Demi Lovato, Ziqi Li
15-41 2,298 October 31, 2017
(Halloween Show)
Julie Bowen, Sofie Dossi, J Balvin
15-42 2,299 November 1, 2017 Ricky Gervais
15-43 2,300 November 2, 2017 Kerry Washington
15-44 2,301 November 3, 2017 Kris Jenner, Brielle Milla
15-45 2,302 November 6, 2017 Jesse Tyler Ferguson, Zully Hernandez
15-46 2,303 November 7, 2017 Adam Levine, Maroon 5
15-47 2,304 November 8, 2017 Idris Elba, Nate Seltzer
15-48 2,305 November 9, 2017
(Ellen's 2,500th Show)
Wanda Sykes, Halsey
15-49 2,306 November 10, 2017 Owen Wilson, Chris Long, St. Vincent, Tavaris
15-50 2,307 November 13, 2017 Vice President Joe Biden, Jon Dorenbos
15-51 2,308 November 14, 2017 Colin Farrell, Dax Shepard
15-52 2,309 November 15, 2017 Kim Kardashian West, Reuben de Maid, Imagine Dragons
15-53 2,310 November 16, 2017 Blake Shelton, Jacob Tremblay, Steve Spangler
15-54 2,311 November 17, 2017 Ty Burrell, Lin-Manuel Miranda
15-55 2,312 November 20, 2017 Garth Brooks
Day 1 of 12 Days!
15-56 2,313 November 21, 2017 Sofia Vergara, Barbra Streisand
Day 2 of 12 Days!
15-57 2,314 November 22, 2017 Beth Behrs, Channing Tatum
Day 3 of 12 Days!
15-58 2,315 November 27, 2017 Eric McCormack, BTS
Day 4 of 12 Days!
15-59 2,316 November 28, 2017 Mark Hamill, Ben Platt. Kym Douglas, Liam Payne
Day 5 of 12 Days!
15-60 2,317 November 29, 2017 Bryan Cranston, Timothée Chalamet & Armie Hammer, Daya
Day 6 of 12 Days!
15-61 2,318 November 30, 2017 Chelsea Handler, Molly Bloom, Sam Smith
Day 7 of 12 Days!
15-62 2,319 December 1, 2017 Octavia Spencer, Dave Franco, Ed Sheeran
Day 8 of 12 Days!
15-63 2,320 December 4, 2017 Tiffany Haddish, Blake Shelton
Day 9 of 12 Days!
15-64 2,321 December 5, 2017 Chris Pratt & Bryce Dallas Howard, The National
Day 10 of 12 Days!
15-65 2,322 December 6, 2017 Neil Patrick Harris, Padma Lakshmi, Chris Stapleton
Day 11 of 12 Days!
15-66 2,323 December 7, 2017 Allison Janney
Day 12 of 12 Days!
15-67 2,324 December 8, 2017 Sebastian Stan, Gwen Stefani
Day 13 of 12 Days!
15-68 2,325 December 11, 2017 Jennifer Hudson
Day 14 of 12 Days!
15-69 2,326 December 12, 2017 Dwayne Johnson, Kevin Hart, Luke Bryan
Day 15 of 12 Days!
15-70 2,327 December 13, 2017 Pitch Perfect 3 cast, Mario Lopez, Sia
15-71 2,328 December 14, 2017 Will Smith, Queens of the Stone Age
15-72 2,329 December 15, 2017 Hillary Clinton, Khalid
15-73 2,330 January 2, 2018 Ricky Martin
15-74 2,331 January 3, 2018 Seth Meyers, The Four: Battle For Stardom cast, Charlie Puth
15-75 2,332 January 4, 2018 Khloe Kardashian
15-76 2,333 January 5, 2018 Kumail Nanjiani
15-77 2,334 January 8, 2018 Debra Messing
15-78 2,335 January 9, 2018 Tom Hanks & Meryl Streep
15-79 2,336 January 10, 2018 Margot Robbie
15-80 2,337 January 11, 2018 Helen Mirren, Luke Evans
15-81 2,338 January 12, 2018 Ted Danson
15-82 2,339 January 15, 2018 Hugh Jackman, Demi Lovato
15-83 2,340 January 16, 2018 Penelope Cruz, Freddie Highmore, LANCO
15-84 2,341 January 17, 2018 Sarah Jessica Parker, Camila Cabello
15-85 2,342 January 18, 2018 Saoirse Ronan, Dierks Bentley
15-86 2,343 January 19, 2018 Dax Shepard, Nicole Richie, Mumford & sons
15-87 2,344 January 22, 2018 Chadwick Boseman, Jeff Garlin, Kalen Allen
15-88 2,345 January 23, 2018 Hoda Kotb, First Aid Kit
15-89 2,347 January 25, 2018 Ed O'Neill, Pharrell Williams & N.E.R.D.
15-90 2,348 January 26, 2018
(Ellen's Birthday Show)
Kristen Bell, DNCE
15-91 2,349 January 29, 2018 Megan Mullally, The 15:17 to Paris cast
15-92 2,350 January 30, 2018 Season 15's Greatest Moments So Far
15-93 2,351 January 31, 2018 Jamie Dornan, Troye Sivan
15-94 2,352 February 1, 2018 Michelle Obama, Portia de Rossi, Surprise appearances by Jimmy Kimmel, Jamie Foxx, Sofia Vergara, and Chance the Rapper
Ellen's 60th Birthday Extravaganza, Part 1
15-95 2,353 February 2, 2018 Portia de Rossi, Surprise Appearances by Jennifer Aniston, Kevin Hart and Channing Tatum
Ellen's 60th Birthday Extravaganza, Part 2
15-96 2,354 February 5, 2018 Melissa McCarthy, Gus Kenworthy
15-97 2,355 February 6, 2018 Michael B. Jordan, Average Andy at Cirque du Solei
15-98 2,356 February 7, 2018 Milo Ventimiglia, Dax Shepard, Claire & Dave Crosby
15-99 2,357 February 8, 2018 Sean Combs
15-100 2,358 February 9, 2018 Drew Barrymore
15-101 2,359 February 12, 2018 John Krasinski, Greta Gerwig
15-102 2,360 February 13, 2018 Jerry Seinfeld, Nick Foles, Dua Lipa
15-103 2,361 February 14, 2018 Natalie Portman, Dax Shepard
15-104 2,362 February 15, 2018 David Spade, Sam Smith, Kalen Allen
15-105 2,363 February 16, 2018 Steph Curry & Ayesha Curry, Ziqi Li aka Lil' Mushroom
15-106 2,364 February 19, 2018 Chrissy Teigen, The Fosters cast, Macey Hensley
15-107 2,365 February 20, 2018 Diane Keaton, Nate Seltzer
15-108 2,366 February 21, 2018 Bill Gates, Kellie Pickler, Keala Settle
15-109 2,367 February 22, 2018 Oprah Winfrey
15-110 2,368 February 23, 2018 Josh Duhamel, Tavaris Jones
15-111 2,369 February 26, 2018 Heidi Klum, Tonya Harding
15-112 2,370 February 27, 2018 Jimmy Kimmel
15-113 2,371 February 28, 2018 Cast of Scandal
15-114 2,372 March 1, 2018 Adam Rippon, Mandy Moore, Adam Devine, Dan + Shay
15-115 2,373 March 2, 2018 Jennifer Lawrence, Laverne Cox, Meghan Trainor
15-116 2,374 March 12, 2018 Bill Hader, Auli'i Cravalho, Jon Dorenbos
15-117 2,375 March 13, 2018 Dana Carvey, Ronda Rousey, 21 Savage
15-118 2,376 March 14, 2018 Sean Hayes, Nick Robinson, Dua Lipa
15-119 2,377 March 15, 2018 Kendall Jenner, Becca Kufrin, Portugal. The Man
15-120 2,378 March 16, 2018 Jennifer Garner, RuPaul
15-121 2,379 March 19, 2018 Allison Janney, Zach Woods
15-122 2,380 March 20, 2018 Tessa Virtue & Scott Moir, John Oliver, Cast of Tag
15-123 2,381 March 21, 2018 Mila Kunis & Kate McKinnon, Camila Cabello, Jenna Fischer & Oliver Hudson
15-124 2,382 March 22, 2018 Ellen Pompeo, Devin Dawson, Adam Rippon
15-125 2,383 March 23, 2018 John Cena, Sigourney Weaver, Jhene Aiko & Rae Sremmurd
15-126 2,384 April 2, 2018 Dwayne Johnson, Logic
15-127 2,385 April 3, 2018 Lauren Graham, Kacey Musgraves
15-128 2,386 April 4, 2018 Seth Rogen, Giada De Laurentiis, Bob Roth
15-129 2,387 April 5, 2018 Kristen Bell, Sen. Kamala Harris
15-130 2,388 April 6, 2018 Ice Cube, Aubrey Plaza
15-131 2,389 April 9, 2018 Alex Rodriguez, Christina Hendricks
15-132 2,390 April 10, 2018 Eva Longoria, Colin Hanks
15-133 2,391 April 11, 2018 Anna Faris, John Legend, Pauly D
15-134 2,392 April 12, 2018 Helen Hunt, Andy Cohen
15-135 2,393 April 13, 2018 Jason Sudeikis, Ali Wong
15-136 2,394 April 16, 2018 Tracee Ellis Ross, Jason Aldean
15-137 2,395 April 17, 2018 Steve Harvey, Samira Wiley, Jon Dorenbos
15-138 2,396 April 18, 2018 Amy Schumer, Evan Rachel Wood, Bebe Rexha & Florida Georgia Line
15-139 2,397 April 19, 2018 Cardi B, Thomas Middleditch, Bazzi
15-140 2,398 April 20, 2018 Elisabeth Moss, Van Jones
Ellen's Earth Day Show
15-141 2,399 April 23, 2018 Macaulay Culkin, Constance Wu & Henry Golding
15-142 2,400 April 24, 2018 Scarlett Johansson, Jake Tapper, Parquet Courts
15-143 2,401 April 25, 2018 Charlize Theron, Danai Gurira
15-144 2,402 April 26, 2018 Chris Hemsworth, Kelly Clarkson
15-145 2,403 April 27, 2018 Benedict Cumberbatch, Keith Urban
15-146 2,404 April 30, 2018 Kim Kardashian West
15-147 2,405 May 1, 2018 Justin Timberlake
15-148 2,406 May 2, 2018 Jennifer Lopez, Derek Hough, Ne-Yo and Jenna Dewan
15-149 2,407 May 3, 2018 Julie Bowen , Leon Bridges
15-150 2,408 May 4, 2018 Melissa McCarthy & Life of the Party cast
15-151 2,409 May 7, 2018 Adam Levine, Maroon 5
15-152 2,410 May 8, 2018 Woody Harrelson, Gayle King, Panic! At The Disco
15-153 2,411 May 9, 2018 Rob Lowe
15-154 2,412 May 10, 2018 Jennifer Garner, Kym Douglas
Ellen's Mothers Day Show
15-155 2,413 May 11, 2018 Jane Fonda, Foo Fighters
15-156 2,414 May 14, 2018 Sarah Paulson
15-157 2,415 May 15, 2018 U2's Bono & The Edge, Diane Keaton
15-158 2,416 May 16, 2018 Portia de Rossi, James Bay
15-159 2,417 May 17, 2018 Sandra Bullock, Shawn Mendes
15-160 2,418 May 18, 2018 Jason Bateman, World of Dance finalists The Lab
15-161 2,419 May 21, 2018 Donald Glover & Alden Ehrenreich, The Hatala Sisters
15-162 2,420 May 22, 2018 David Spade, Maren Morris & Zedd, Kalen Allen
15-163 2,421 May 23, 2018 Mark Wahlberg, So You Think You Can Dance All-Stars
15-164 2,422 May 24, 2018 Amy Poehler & Nick Offerman, Tig Notaro
15-165 2,423 May 25, 2018 BTS, Ewan McGregor
15-166 2,424 May 29, 2018 Jon Hamm, Brandi Carlile
15-167 2,425 May 30, 2018 Olivia Munn, Tony Hale
Special Guest Host Sean Hayes
15-168 2,426 May 31, 2018 Jamie Foxx and Corinne Foxx, Fall Out Boy
Special Guest Host Kristen Bell
15-168 2,426 June 1, 2018 Ellen's Biggest Music Stars of Season 15
15-169 2,427 June 4, 2018 Mindy Kaling, Michael Ray
15-170 2,428 June 5, 2018 Jim Parsons, Young Dylan
15-171 2,429 June 6, 2018 Samuel L. Jackson, Dan Reynolds
15-172 2,430 June 7, 2018 Anne Hathaway, Darren Criss
15-174 2,432 June 11, 2018 Howie Mandel, Shaquille O'Neal
15-175 2,433 June 12, 2018 Ellen's Most Memorable Kids of Season 15
15-176 2,434 June 13, 2018 Viral Stars of Season 15 with Kalen Allen
15-176 2,435 June 14, 2018 Ellen's First-Timers of Season 15
15-177 2,436 June 15, 2018 Ellen's Funny Ladies of Season 15
15-178 2,437 June 18, 2018 Ellen's Inspiring Stories of Season 15
15-179 2,438 June 19, 2018 Hollywood's Biggest Stars of Season 15
15-180 2,439 June 20, 2018 Ellen's Funny Guys of Season 15
15-181 2,440 June 21, 2018 Sports All-Stars of Season 15
15-182 2,441 August 29, 2018 Mel B, Grocery Store Joe, Jon Dorenbos
Special Guest Host Lea Michelle
15-183 2,442 August 30, 2018 Kathryn Hahn, BTS
Special Guest Host Mario Lopez
15-184 2,443 August 31, 2018 Topher Grace, Kacey Musgraves
Special Guest Host Mario Lopez
References[edit]
Jump up ^ https://www.thetvdb.com/?tab=season&seriesid=72194&seasonid=727492&lid=7
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Field-effect transistor
From Wikipedia, the free encyclopedia
Jump to: navigation, search
"FET" redirects here. For other uses, see FET (disambiguation).
The field-effect transistor (FET) is a transistor that uses an electric field to control the electrical behaviour of the device. FETs are also known as unipolar transistors since they involve single-carrier-type operation. Many different implementations of field effect transistors exist. Field effect transistors generally display very high input impedance at low frequencies. The conductivity between the drain and source terminals is controlled by an electric field in the device, which is generated by the voltage difference between the body and the gate of the device.
Contents
[hide]
1 History
2 Basic information
3 More about terminals
3.1 Effect of gate voltage on current
3.1.1 n-channel
3.1.2 p-channel
3.2 Effect of source/drain voltage on channel
4 Composition
5 Types
6 Advantages
7 Disadvantages
8 Failure modes
9 Uses
10 Source-gated transistor
11 See also
12 References
13 External links
History[edit]
Main article: History of the transistor
The field-effect transistor was first patented by Julius Edgar Lilienfeld in 1926 and by Oskar Heil in 1934, but practical semiconducting devices (the junction field-effect transistors [JFETs]) were developed later after the transistor effect was observed and explained by the team of William Shockley at Bell Labs in 1947, immediately after the 20-year patent period eventually expired.
The first type of JFET was the static induction transistor (SIT), invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950. The SIT is a type of JFET with a short channel length.[1] The metal–oxide–semiconductor field-effect transistor (MOSFET), which largely superseded the JFET and had a profound effect on digital electronic development, was invented by Dawon Kahng and Martin Atalla in 1959.[2]
Basic information[edit]
See also: Charge carrier § Majority and minority carriers
FETs can be majority-charge-carrier devices, in which the current is carried predominantly by majority carriers, or minority-charge-carrier devices, in which the current is mainly due to a flow of minority carriers.[3] The device consists of an active channel through which charge carriers, electrons or holes, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through ohmic contacts. The conductivity of the channel is a function of the potential applied across the gate and source terminals.
The FET's three terminals are:[4]
source (S), through which the carriers enter the channel. Conventionally, current entering the channel at S is designated by IS.
drain (D), through which the carriers leave the channel. Conventionally, current entering the channel at D is designated by ID. Drain-to-source voltage is VDS.
gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control ID.
More about terminals[edit]
Cross section of an n-type MOSFET
All FETs have source, drain, and gate terminals that correspond roughly to the emitter, collector, and base of BJTs. Most FETs have a fourth terminal called the body, base, bulk, or substrate. This fourth terminal serves to bias the transistor into operation; it is rare to make non-trivial use of the body terminal in circuit designs, but its presence is important when setting up the physical layout of an integrated circuit. The size of the gate, length L in the diagram, is the distance between source and drain. The width is the extension of the transistor, in the direction perpendicular to the cross section in the diagram (i.e., into/out of the screen). Typically the width is much larger than the length of the gate. A gate length of 1 µm limits the upper frequency to about 5 GHz, 0.2 µm to about 30 GHz.
The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to flow through or blocks their passage by creating or eliminating a channel between the source and drain. Electron-flow from the source terminal towards the drain terminal is influenced by an applied voltage. The body simply refers to the bulk of the semiconductor in which the gate, source and drain lie. Usually the body terminal is connected to the highest or lowest voltage within the circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected together since the source is often connected to the highest or lowest voltage within the circuit, although there are several uses of FETs which do not have such a configuration, such as transmission gates and cascode circuits.
Effect of gate voltage on current[edit]
I–V characteristics and output plot of a JFET n-channel transistor.
Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve(transfer characteristics) in an n-channel nanowire MOSFET. Note that the threshold voltage for this device lies around 0.45 V.
FET conventional symbol types
The FET controls the flow of electrons (or electron holes) from the source to drain by affecting the size and shape of a "conductive channel" created and influenced by voltage (or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the body and source are connected.) This conductive channel is the "stream" through which electrons flow from source to drain.
n-channel[edit]
In an n-channel "depletion-mode" device, a negative gate-to-source voltage causes a depletion region to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively turned off like a switch (see right figure, when there is very small current). This is called "pinch-off", and the voltage at which it occurs is called the "pinch-off voltage". Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large).
In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one. The positive voltage attracts free-floating electrons within the body towards the gate, forming a conductive channel. But first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a depletion region, and the voltage at which this occurs is referred to as the threshold voltage of the FET. Further gate-to-source voltage increase will attract even more electrons towards the gate which are able to create a conductive channel from source to drain; this process is called inversion.
p-channel[edit]
In a p-channel "depletion-mode" device, a positive voltage from gate to body creates a depletion layer by forcing the positively charged holes to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, negatively charged acceptor ions. Conversely, in a p-channel "enhancement-mode" device, a conductive region does not exist and negative voltage must be used to generate a conduction channel.
Effect of source/drain voltage on channel[edit]
For either enhancement- or depletion-mode devices, at drain-to-source voltages much less than gate-to-source voltages, changing the gate voltage will alter the channel resistance, and drain current will be proportional to drain voltage (referenced to source voltage). In this mode the FET operates like a variable resistor and the FET is said to be operating in a linear mode or ohmic mode.[5][6]
If drain-to-source voltage is increased, this creates a significant asymmetrical change in the shape of the channel due to a gradient of voltage potential from source to drain. The shape of the inversion region becomes "pinched-off" near the drain end of the channel. If drain-to-source voltage is increased further, the pinch-off point of the channel begins to move away from the drain towards the source. The FET is said to be in saturation mode;[7] although some authors refer to it as active mode, for a better analogy with bipolar transistor operating regions.[8][9] The saturation mode, or the region between ohmic and saturation, is used when amplification is needed. The in-between region is sometimes considered to be part of the ohmic or linear region, even where drain current is not approximately linear with drain voltage.
Even though the conductive channel formed by gate-to-source voltage no longer connects source to drain during saturation mode, carriers are not blocked from flowing. Considering again an n-channel enhancement-mode device, a depletion region exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free to move out of the channel through the depletion region if attracted to the drain by drain-to-source voltage. The depletion region is free of carriers and has a resistance similar to silicon. Any increase of the drain-to-source voltage will increase the distance from drain to the pinch-off point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied. This proportional change causes the drain-to-source current to remain relatively fixed, independent of changes to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a constant-current source rather than as a resistor, and can effectively be used as a voltage amplifier. In this case, the gate-to-source voltage determines the level of constant current through the channel.
Composition[edit]
FETs can be constructed from various semiconductors, with silicon being by far the most common. Most FETs are made by using conventional bulk semiconductor processing techniques, using a single crystal semiconductor wafer as the active region, or channel.
Among the more unusual body materials are amorphous silicon, polycrystalline silicon or other amorphous semiconductors in thin-film transistors or organic field-effect transistors (OFETs) that are based on organic semiconductors; often, OFET gate insulators and electrodes are made of organic materials, as well. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs).
In June 2011, IBM announced that it had successfully used graphene-based FETs in an integrated circuit.[10][11] These transistors are capable of about 2.23 GHz cutoff frequency, much higher than standard silicon FETs.[12]
Types[edit]
Depletion-type FETs under typical voltages: JFET, poly-silicon MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.
Depletion
Electrons
Holes
Metal
Insulator
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
The channel of a FET is doped to produce either an n-type semiconductor or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate. Types of FETs include:
The JFET (junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body.
The MOSFET (metal–oxide–semiconductor field-effect transistor) utilizes an insulator (typically SiO2) between the gate and the body.
The MNOS metal–nitride–oxide–semiconductor transistor utilizes an nitride-oxide layer insulator between the gate and the body.
The DGMOSFET (dual-gate MOSFET), a FET with two insulated gates.
The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor.
The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode.
The HIGFET (heterostructure insulated-gate field-effect transistor) is now used mainly in research.[13]
The MODFET (modulation-doped field-effect transistor) is a high-electron-mobility transistor using a quantum well structure formed by graded doping of the active region.
The TFET (tunnel field-effect transistor) is based on band-to-band tunneling.[14]
The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation. Power MOSFETs are still the device of choice for drain-to-source voltages of 1 to 200 V.
The HEMT (high-electron-mobility transistor), also called a HFET (heterostructure FET), can be made using bandgap engineering in a ternary semiconductor such as AlGaAs. The fully depleted wide-band-gap material forms the isolation between gate and body.
The ISFET (ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H+, see pH electrode) changes, the current through the transistor will change accordingly.
The BioFET (Biologically sensitive field-effect transistor) is a class of sensors/biosensors based on ISFET technology which are utilized to detect charged molecules; when a charged molecule is present, changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor. These include EnFETs, ImmunoFETs, GenFETs, DNAFETs, CPFETs, BeetleFETs, and FETs based on ion-channels/protein binding.[15]
The MESFET (metal–semiconductor field-effect transistor) substitutes the p–n junction of the JFET with a Schottky barrier; and is used in GaAs and other III-V semiconductor materials.
The NOMFET is a nanoparticle organic memory field-effect transistor.[16]
The GNRFET (graphene nanoribbon field-effect transistor) uses a graphene nanoribbon for its channel.[17]
The VeSFET (vertical-slit field-effect transistor) is a square-shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the slit.[18]
The CNTFET (carbon nanotube field-effect transistor).
The OFET (organic field-effect transistor) uses an organic semiconductor in its channel.
The DNAFET (DNA field-effect transistor) is a specialized FET that acts as a biosensor, by using a gate made of single-strand DNA molecules to detect matching DNA strands.
The QFET (quantum field effect transistor) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction.
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces.[19][20]
Advantages[edit]
One advantage of the FET is its high gate to main current resistance, on the order of 100 MΩ or more, thus providing a high degree of isolation between control and flow. Because base current noise will increase with shaping time,[21] a FET typically produces less noise than a bipolar junction transistor (BJT), and is thus found in noise sensitive electronics such as tuners and low-noise amplifiers for VHF and satellite receivers. It is relatively immune to radiation. It exhibits no offset voltage at zero drain current and hence makes an excellent signal chopper. It typically has better thermal stability than a BJT.[4] Because they are controlled by gate charge, once the gate is closed or opened, there is no additional power draw, as there would be with a bipolar junction transistor or with non-latching relays in some states. This allows extremely low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are reduced compared to other types of switches.
Disadvantages[edit]
It has a relatively low gain–bandwidth product compared to a BJT. The MOSFET has a drawback of being very susceptible to overload voltages, thus requiring special handling during installation.[22] The fragile insulating layer of the MOSFET between the gate and channel makes it vulnerable to electrostatic discharge or changes to threshold voltage during handling. This is not usually a problem after the device has been installed in a properly designed circuit.
FETs often have a very low "on" resistance and have a high "off" resistance. However, the intermediate resistances are significant, and so FETs can dissipate large amounts of power while switching. Thus efficiency can put a premium on switching quickly, but this can cause transients that can excite stray inductances and generate significant voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very careful layout and can involve trades between switching speed and power dissipation. There is also a trade-off between voltage rating and "on" resistance, so high-voltage FETs have a relatively high "on" resistance and hence conduction losses.
Failure modes[edit]
FETs are relatively robust, especially when operated within the temperature and electrical limitations defined by the manufacturer (proper derating). However, modern FET devices can often incorporate a body diode as part of the overall functionality. If the characteristics of the body diode are not taken into consideration, the FET can experience slow body diode behavior, where a parasitic transistor will turn on and allow high current to be drawn from drain to source when the FET is off.[23]
Uses[edit]
The most commonly used FET is the MOSFET. The CMOS (complementary metal oxide semiconductor) process technology is the basis for modern digital integrated circuits. This process technology uses an arrangement where the (usually "enhancement-mode") p-channel MOSFET and n-channel MOSFET are connected in series such that when one is on, the other is off.
In FETs, electrons can flow in either direction through the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrically from source to drain. This makes FETs suitable for switching analog signals between paths (multiplexing). With this concept, one can construct a solid-state mixing board, for example.
A common use of the FET is as an amplifier. For example, due to its large input resistance and low output resistance, it is effective as a buffer in common-drain (source follower) configuration.
IGBTs are used in switching internal combustion engine ignition coils, where fast switching and voltage blocking capabilities are important.
Source-gated transistor[edit]
Source-gated transistors are more robust to manufacturing and environmental issues in large-area electronics such as display screens, but are slower in operation than FETs.[24]
See also[edit]
Chemical field-effect transistor
FET amplifier
FlowFET
Multigate device, especially FinFET
References[edit]
Jump up ^ Junction Field-Effect Devices, Semiconductor Devices for Power Conditioning, 1982
Jump up ^ 1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated - The Silicon Engine | Computer History Museum
Jump up ^ Jacob Millman (1985). Electronic devices and circuits. Singapore: McGraw-Hill International. p. 397. ISBN 0-07-085505-6.
^ Jump up to: a b Millman (1985). Electronic devices and circuits. Singapore: McGraw-Hill. pp. 384–385. ISBN 0-07-085505-6.
Jump up ^ C Galup-Montoro; Schneider MC (2007). MOSFET modeling for circuit analysis and design. London/Singapore: World Scientific. p. 83. ISBN 981-256-810-7.
Jump up ^ Norbert R Malik (1995). Electronic circuits: analysis, simulation, and design. Englewood Cliffs, NJ: Prentice Hall. pp. 315–316. ISBN 0-02-374910-5.
Jump up ^ RR Spencer; Ghausi MS (2001). Microelectronic circuits. Upper Saddle River NJ: Pearson Education/Prentice-Hall. p. 102. ISBN 0-201-36183-3.
Jump up ^ A. S. Sedra; K.C. Smith (2004). Microelectronic circuits (Fifth ed.). New York: Oxford. p. 552. ISBN 0-19-514251-9.
Jump up ^ PR Gray; PJ Hurst; SH Lewis; RG Meyer (2001). Analysis and design of analog integrated circuits (Fourth ed.). New York: Wiley. pp. §1.5.2 p. 45. ISBN 0-471-32168-0.
Jump up ^ IBM creates first graphene based integrated circuit
Jump up ^ Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y; Wu, Y; Dimitrakopoulos, C.; Grill, A; Avouris, P & Jenkins, K. A. (2011). "Wafer-Scale Graphene Integrated Circuit". Science. 332: 1294–1297. doi:10.1126/science.1204428. PMID 21659599.
Jump up ^ Flexible graphene transistor sets new records - physicsworld.com
Jump up ^ freepatentsonline.com, HIGFET and method - Motorola
Jump up ^ Ionescu, A. M.; Riel, H. (2011). "Tunnel field-effect transistors as energy-efficient electronic switches". Nature. 479 (7373): 329–337. doi:10.1038/nature10679. PMID 22094693.
Jump up ^ Poghossianb, Arshak (2002). "Recent advances in biologically sensitive field-effect transistors (BioFETs)". Analyst. 127: 1137–1151. doi:10.1039/B204444G.
Jump up ^ sciencedaily.com
Jump up ^ Sarvari H, et al. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's Function in mode space". Physica E: Low-dimensional Systems and Nanostructures. 43 (8): 1509–1513. doi:10.1016/j.physe.2011.04.018.
Jump up ^ Jerzy Ruzyllo (2016-09-15). Semiconductor Glossary: A Resource for Semiconductor Community. World Scientific. pp. 244–. ISBN 978-981-4749-56-5.
Jump up ^ Appenzeller, J.; Knoch, J.; Bjork, M. T.; Riel, H.; Schmid, H.; Riess, W. (November 2008). "Toward Nanowire Electronics". IEEE Transactions on Electron Devices. 55 (11): 2827–2845. doi:10.1109/ted.2008.2008011. ISSN 0018-9383.
Jump up ^ Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017-10-03). "Understanding contact gating in Schottky barrier transistors from 2D channels". Scientific Reports. 7 (1). doi:10.1038/s41598-017-12816-3. ISSN 2045-2322.
Jump up ^ physics.lbl.gov
Jump up ^ Allen Mottershead (2004). Electronic devices and circuits. New Delhi: Prentice-Hall of India. ISBN 81-203-0124-2.
Jump up ^ Slow Body Diode Failures of Field Effect Transistors (FETs): A Case Study.
Jump up ^ "Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits"
External links[edit]
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How Semiconductors and Transistors Work (MOSFETs) WeCanFigureThisOut.org
Junction Field Effect Transistor
CMOS gate circuitry
Winning the Battle Against Latchup in CMOS Analog Switches
Field Effect Transistors in Theory and Practice
The Field Effect Transistor as a Voltage Controlled Resistor
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